DatasheetsPDF.com

IS43R86400E

Part Number	IS43R86400E
Manufacturer	Integrated Silicon Solution
Description	512Mb DDR SDRAM
Published	Jul 25, 2016
Detailed Description	IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013 ...
Datasheet	IS43R86400E PDF File

Overview

IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013 FEATURES • VDD and VDDQ: 2.
5V ± 0.
2V (-5, -6) • VDD and VDDQ: 2.
5V ± 0.
1V (-4) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data Mask for write data.
DM masks write data at both rising and falling edges of data strobe • Burst Length: 2, 4 and 8 • Burst Type: Sequential and Interleave mode • Programmable CAS latency: 2, 2.
5 and 3 • Auto Refresh and Self Refresh Modes • Auto Precharge OPTIONS • Die revision: D • Configuration(s): 16Mx32 32Mx16 64Mx8 • Package(s): 144 Ball BGA (x32) 66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16) • Lead-free package available • Temperature Range: Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Automotive, A1 (-40°C to +85°C) Automotive, A2 (-40°C to +105°C) DEVICE OVERVIEW ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle.
The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations.
The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts.
The programmable features of burst length, burst sequence and CAS latency enable further advantages.
The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while outpu...

Similar Datasheet

IS43R86400D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM - Integrated Silicon Solution
IS43R86400E 512Mb DDR SDRAM - Integrated Silicon Solution
IS43R86400F 512Mb DDR SDRAM - ISSI

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)