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2SC2526

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1076 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME...

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