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IRF831FI

Inchange Semiconductor

N-Channel MOSFET Transistor


Description
isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for high efficiency switch mode power suppl...



Inchange Semiconductor

IRF831FI

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