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IRFP350A

Part Number	IRFP350A
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Aug 8, 2016
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Stat...
Datasheet	IRFP350A PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
3Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 202 W TJ Max.
Operating Junction Temperature -55~15...

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