RF transistor
Description
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25 Watts, 50V, 1200-1400MHz
200!s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
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