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BUL741

Part Number	BUL741
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 12, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741 DESCRIPTION ·Collector–Emitte...
Datasheet	BUL741 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 0.
5V(Max) @ IC= 0.
7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 2.
5 A ICM Collector Current-peak 5A IB Base Current-Continuous 1.
5 A IBM Base Current-peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperatu...

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