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BUS132H

Inchange Semiconductor
Part Number BUS132H
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 12, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS132H DESCRIPTION ·High Switching ...
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BUS132H
BUS132H

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS132H DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-Peak 16 A IB Base Current 6A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 12 150 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS132H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified...


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