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BUS132

Inchange Semiconductor
Part Number BUS132
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 12, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS132/A DESCRIPTION ·High Switchin...
Datasheet PDF File BUS132 PDF File

BUS132
BUS132

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS132/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS132 500V (Min)-BUS132A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS132 850 BUS132A 1000 V VCEO Collector-Emitter Voltage BUS132 BUS132A 450 500 V VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 8 16 6 12 150 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS132/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS132 BUS132A IC= 0.
1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitter Saturation Voltage BUS132 IC= 3A; IB= 0.
4A BUS132A IC= 3A; IB= 0.
6A 2.
5 V 1.
0 VCE(sat)-2 Collector-Emitter Saturation Voltage BUS132 IC= 5A; IB= 0.
66A BUS132A IC= 5A; IB= 1A 3.
0 V 1.
5 VBE(sat) ICEV IEBO Base-Emitter Saturation Voltage BUS132 IC= 5A; IB= 0.
66A BUS132A IC= 5A; IB= 1A Collector Cutoff Current VCE=VCESMmax;VBE=-1.
5V VCE=VCESMmax;VBE=-1.
5V;TJ=100℃ Emitter Cutoff Current VEB= 6V; IC= 0 1.
5 V 1.
5 0.
25 1.
5 mA 1 mA hFE DC Current Gain COB Output Capacitance Switching Times , Resistive Load IC= 8A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz 5 350 pF ton Turn-On Time tstg Storage Time tf Fall Time IC= 5A ;IB1= 0.
66A; IB2= -1.
3A 0.
35 μs 1.
5 μs 0.
1 μs isc website：www.
iscsemi.
cn 2 ...


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