DatasheetsPDF.com

CPC3708

IXYS
Part Number CPC3708
Manufacturer IXYS
Description N-Channel MOSFET
Published Aug 15, 2016
Detailed Description INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 ...
Datasheet PDF File CPC3708 PDF File

CPC3708
CPC3708

Overview
INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 350 14 1.
1 2.
5 Units V  W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-89 and SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings Applications • LED Drive Circuits • Telecommunications • Normally On Switches • Ignition Modules • Converters • Security • Power Supplies • Regulators Circuit Symbol G D S CPC3708 350V N-Channel Depletion Mode FET Description The CPC3708 is a N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3708Z) and an SOT-89 package (CPC3708C).
Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process.
The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical on-resistance of 8 and a drain-to-source voltage of 350V.
As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
Ordering Information Part Number CPC3708CTR CPC3708ZTR Description SOT-89: Tape and Reel (1000/Reel) SOT-223: Tape and Reel (1000/Reel) Package Pinout: D 4 123 GDS Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC3708-R03 www.
ixysic.
com 1 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage (V(BR)DSX) Gate-to-Source Voltage (VGS) Total Package Dissipation 1 350 V ±20 V SOT-89 SOT-223 Operational Temperature Storage Temperature 1.
1 2.
5 -40...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)