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CEB6060L

Chino-Excel Technology
Part Number CEB6060L
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RD...
Datasheet PDF File CEB6060L PDF File

CEB6060L
CEB6060L


Overview
CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.
4A,RDS(ON) = 21mΩ @VGS = 10V.
RDS(ON) = 25mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±16 52.
4 37 210 120 0.
8 Operating and Store Temperature Range TJ,Tstg -65 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
24 62.
5 Units V V A A A W W/ C C Units C/W C/W Details are subject to change without notice .
1 Rev 3.
2011.
Jun http://w...


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