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NTE273

Part Number	NTE273
Manufacturer	NTE
Description	Silicon Darlington Complementary
Published	Aug 18, 2016
Detailed Description	NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (...
Datasheet	NTE273 PDF File

Overview

NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector–Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.
5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector–Emitter Voltage (Note 2), VCEO .
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40V Collector–Emitter Voltage, VCES .
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40V Collector–Base Voltage, VCB .
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50V Emitter–Base Voltage, VEB .
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12V Collector Current, IC .
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2A Total Power Dissipation (TA = +25°C), PD .
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1W Derate above 25°C .
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8mW/°C Total Power Dissipation (TC = +25°C), PD .
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10W Derate above 25°C .
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80mW/°C Operating Junction Temperature Range, TJ .
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–55 to +150°C Storage Temperature Range, Tstg .
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