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CET451AN

Chino-Excel Technology
Part Number CET451AN
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50...
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CET451AN
CET451AN

Overview
CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.
2A, RDS(ON) = 35mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7.
2 IDM 25 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 ...


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