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4803

Tuofeng Semiconductor
Part Number 4803
Manufacturer Tuofeng Semiconductor
Description Dual P-Channel MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor G...
Datasheet PDF File 4803 PDF File

4803
4803

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product 4803 is Pb-free (meets ROHS & Sony 259 specifications).
AO4803 is a Green Product ordering option.
4803 is electrically identical.
Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.
5V) SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -20 2 1.
4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.
5 110 40 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=5.
0A VGS=-4.
5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VD...


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