DatasheetsPDF.com

IXFH9N80Q

IXYS
Part Number IXFH9N80Q
Manufacturer IXYS
Description Power MOSFETs
Published Sep 10, 2016
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q V...
Datasheet PDF File IXFH9N80Q PDF File

IXFH9N80Q
IXFH9N80Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9A = 1.
1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg TL Md Weight Symbol VDSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 800 V 800 V ±20 V ±30 V 9A 36 A 9A 20 mJ 700 mJ 5 V/ns 180 -55 .
.
.
+150 150 -55 .
.
.
+150 300 1.
13/10 6 4 W °C °C °C °C Nm/lb.
in.
g g Test Conditions VGS = 0 V, ID = 1 mA V = V , I = 2.
5 mA DS GS D VGS = ±20 VDC, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
800 V 3.
0 5.
0 V ±100 nA TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.
8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 50 µA 1 mA 1.
1 Ω Advantages l Easy to mount l Space savings l High power density © 1999 IXYS All rights reserved 98629 (6/99) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VDS = 10 V; ID = 0.
5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 35 2200 240 41 S pF pF pF VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 4.
7 Ω (External), 20 20 42 13 ns ns ns ns VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 56 17 22 n...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)