DatasheetsPDF.com

ICE60N150FP

Micross Components
Part Number ICE60N150FP
Manufacturer Micross Components
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description ICE60N150FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability H...
Datasheet PDF File ICE60N150FP PDF File

ICE60N150FP
ICE60N150FP

Overview
ICE60N150FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 25A 650V 0.
13Ω 85nC Pin Description: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 25 75 690 6 50 ±20 ±30 35 -55 to +150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 6A Limited by Tjmax VDS = 480V, ID = 25A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.
5 scr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)