DatasheetsPDF.com

STC4567

Stanson Technology
Part Number STC4567
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power ...
Datasheet PDF File STC4567 PDF File

STC4567
STC4567

Overview
STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION SOP-8 FEATURE N-Channel z 40V/6.
0A, RDS(ON) = 48mΩ (Typ.
) @VGS = 10V z 40V/5.
0A, RDS(ON) = 63mΩ @VGS = 4.
5V PART MARKING P-Channel z -40V/-7.
2A, RDS(ON) = 90mΩ(Typ.
) @VGS = -10V z -40V/-5.
0A, RDS(ON)= 103mΩ @VGS = - 4.
5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package Y∶Year A∶Product code ORDERING INFORMATION Part Number Package Part Marking STC4567S8RG SOP-8 STC4567 ※ Process Code : A ~ Z ; a ~ z ※ STC4567S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STC4567 2008.
V1 STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS Typical NP 40 -40 Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ ±20 ±20 6.
0 -7.
2 5.
0 -5.
0 20 -20 2.
3 -2.
3 2.
5 1.
28 2.
5 1.
28 150 Storgae Temperature Range Thermal Resistance-Junction T≦10Sec to Ambient Sready State TSTG RθJA -55/150 52.
5 80 62.
5 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)