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STN8822A

Stanson Technology
Part Number STN8822A
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode powe...
Datasheet PDF File STN8822A PDF File

STN8822A
STN8822A

Overview
STN8822A Dual N Channel Enhancement Mode MOSFET 6.
0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6 FEATURE 20V/6.
0A, RDS(ON) = 25m-ohm @VGS =4.
5V 20V/5.
0A, RDS(ON) =42m-ohm @VGS =2.
5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC curren...


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