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STN8882D

Stanson Technology
Part Number STN8882D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN8882D N Channel Enhancement Mode MOSFET 60.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power fiel...
Datasheet PDF File STN8882D PDF File

STN8882D
STN8882D

Overview
STN8882D N Channel Enhancement Mode MOSFET 60.
0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE � 30V/ 35A, RDS(ON) = 5mΩ � @VGS = 10V � 30V/35A, RDS(ON) = 7mΩ @VGS = 4.
5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability ...


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