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STN1810

Stanson Technology
Part Number STN1810
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File STN1810 PDF File

STN1810
STN1810

Overview
STN1810 N Channel Enhancement Mode MOSFET 8.
0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These applications such as notebook computer power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded.
PIN CONFIGURATION SOP-8 FEATURE 60V/8.
0A, RDS(ON) = 140mΩ (Typ.
) @VGS = 10V 60V/6.
5.
0A, RDS(ON) = 150mΩ @VGS = 7.
0V Super high density cell design for extremely low RDS(ON) Exception...


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