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DF2B7SL

Toshiba Semiconductor
Part Number DF2B7SL
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Sep 29, 2016
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2B7SL DF2B7SL 1. Applications • ESD Protection Note: This product is ...
Datasheet PDF File DF2B7SL PDF File

DF2B7SL
DF2B7SL

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2B7SL DF2B7SL 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Pin 1 2: Pin 2 SL2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage(IEC61000-4-2)(Air) VESD (Note 1) ±17 ±20 kV kV Peak pulse power PPK 45 W Peak pulse current Junction temperature IPP (Note 2) Tj 3 150 A  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production 2014-10 1 2015-04-03 Rev.
5.
0 4.
Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance DF2B7SL Fig.
4.
1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ.
Max Unit Working peak reverse voltage VRWM    5.
3 V Reverse breakdown voltage VBR IBR = 1 mA 5.
8 6.
8 7.
8 V Reverse current IR VRWM = 5.
3 V  2 500...


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