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AP2625GY

Advanced Power Electronics
Part Number AP2625GY
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 3, 2016
Detailed Description Advanced Power Electronics Corp. AP2625GY RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Ch...
Datasheet PDF File AP2625GY PDF File

AP2625GY
AP2625GY


Overview
Advanced Power Electronics Corp.
AP2625GY RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low Gate Drive ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial applications.
BVDSS RDS(ON) ID -30V 185mΩ - 2A D2 S1 D1 SOT-26 G2 S2 G1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating -30 ±12 -2.
0 -1.
6 -20 1.
2 0.
01 -55 to 150 -55 to 150 Value 110 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 201023073-1/4 AP2625GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=-250uA VGS=-4.
5V, ID=-1.
6A VGS=-2.
5V, ID=-1A VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±12V ID=-2A VDS=-24V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.
0MHz -30 - - V - - 185 mΩ - - 265 mΩ -0.
3 - -1.
2 V - 3.
3 - S -...


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