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AP2625Y

Advanced Power Electronics
Part Number AP2625Y
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 3, 2016
Detailed Description Advanced Power Electronics Corp. AP2625Y P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance...
Datasheet PDF File AP2625Y PDF File

AP2625Y
AP2625Y

Overview
Advanced Power Electronics Corp.
AP2625Y P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
BVDSS RDS(ON) ID -30V 135mΩ - 2.
3A D2 S1 D1 SOT-26 G2 S2 G1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -30 ±12 -2.
3 -2 -20 1.
2 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max.
Value 110 Unit ℃/...


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