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GV3407

P-Channel MOSFET

Description

Gem micro semiconductor Inc. GV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -4.3A 60 @ VGS = -10 V,ID=-4.3A 78 @ VGS = -4.5V,ID=-3.0A Features  Super high dense cell trench design for low RDS(on).  Rugged and reliable.  SOT-23-3L package  Ordering information：GV3407（Lead（Pb）-free） GV3407-...

Gem micro

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GV3407 P-Channel MOSFET - Gem micro

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