isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage
: VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier high fT a...
