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BD234G

ON Semiconductor
Part Number BD234G
Manufacturer ON Semiconductor
Description Plastic Medium Power Bipolar Transistors
Published Oct 24, 2016
Detailed Description BD237G (NPN), BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio ampli...
Datasheet PDF File BD234G PDF File

BD234G
BD234G

Overview
BD237G (NPN), BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.
0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.
125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD234G DB237G, BD238G VCEO 45 80 Vdc Collector−Base Voltage BD234G DB237G, BD238G VCBO 60 100 Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range VEBO IC IB PD TJ, Tstg 5.
0 2.
0 1.
0 25 – 55 to + 150 Vdc Adc Adc W _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affe...


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