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MJE803G

ON Semiconductor
Part Number MJE803G
Manufacturer ON Semiconductor
Description Plastic Darlington Complementary Silicon Power Transistors
Published Oct 24, 2016
Detailed Description MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transis...
Datasheet PDF File MJE803G PDF File

MJE803G
MJE803G

Overview
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications.
Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.
0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − MJE700 and MJE800 Series • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO 60 80 Vdc Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCB Vdc 60 80 Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.
0 Vdc IC 4.
0 Adc IB 0.
1 Adc PD 40 W 0.
32 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 _C Stresses exceed...


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