Silicon PNP Power Transistor
Description
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
ST26025A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.) ·High DC Current Gain-
: hFE= 750(Min.)@IC= -10A ·Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device
performance an...
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