N-Channel Power Trench MOSFET
Description
FDMC3612 N-Channel PowerTrench® MOSFET
FDMC3612
N-Channel Power Trench® MOSFET
100 V, 12 A, 110 mΩ
February 2012
Features
General Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fai...
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