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KTD2059

Part Number	KTD2059
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 14, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Pow...
Datasheet	KTD2059 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Max)@ (IC= 4A, IB= 0.
4A) ·Complement to Type KTB1367 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junct...

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