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2SCR573D

Part Number	2SCR573D
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.35V@(IC=1A,IB=...
Datasheet	2SCR573D PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.
35V@(IC=1A,IB=50mA) ·Complementary NPN types:2SAR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR573D isc...

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