Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable ...
Inchange Semiconductor
2SD180 PDF File
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