DatasheetsPDF.com

2SC2983

Part Number	2SC2983
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·...
Datasheet	2SC2983 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 160 V 160 V 5 V 1.
5 A 0.
3 A 15 W 150 ℃ -55~150 ℃...

Similar Datasheet

2SC2901 NPN SILICON TRANSISTOR - NEC
2SC2901 NPN Silicon Epitaxial Planar Transistor - SEMTECH
2SC2901 NPN Silicon Epitaxial Planar Transistor - Bluecolour
2SC2901 NPN Silicon Epitaxial Planar Transistor - PACO
2SC2902 NPN Transistor - INCHANGE
2SC2902 SILICON POWER TRANSISTOR - SavantIC
2SC2904 NPN TRANSISTOR - Mitsubishi Electric Semiconductor
2SC2904 NPN SILICON RF POWER TRANSISTOR - ASI
2SC2904 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2905 NPN TRANSISTOR - Mitsubishi Electric Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)