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2N3197

Part Number	2N3197
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 22, 2016
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3197 DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 p...
Datasheet	2N3197 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3197 DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC TJ, Tstg Collector Power Dissipation@TC=25℃ 75 Operating and Storage Junction Temperature Range -65~+200 W ℃ THERMAL CHARACTERISTICS SY...

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