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PTFB191501F

Infineon Technologies
Part Number PTFB191501F
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Nov 27, 2016
Detailed Description Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Descript...
Datasheet PDF File PTFB191501F PDF File

PTFB191501F
PTFB191501F

Overview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F IMD (dBc) Efficiencydiscontinu(%)ed products Two-carrier WCDMA Drive-up VDD = 30 V, IDQ ...


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