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PXAC260602FC

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced packa...



Infineon

PXAC260602FC

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