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CS6N60A3D

Part Number	CS6N60A3D
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS6N60 A3D ○R General Description： CS6N60 A3D, the silicon N-channel Enhanced VDMOSFE...
Datasheet	CS6N60A3D PDF File

Overview

Silicon N-Channel Power MOSFET CS6N60 A3D ○R General Description： CS6N60 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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