DatasheetsPDF.com

CJD04N60

Part Number	CJD04N60
Manufacturer	ZPSEMI
Description	N-Channel Power MOSFET
Published	Dec 19, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power M...
Datasheet	CJD04N60 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX 3.
0Ω@10V ID 4A TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode wigh fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE 1 23 FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specificatio...

Similar Datasheet

CJD04N60 N-Channel Power MOSFET - JCET
CJD04N60 N-Channel Power MOSFET - ZPSEMI
CJD04N60A N-Channel MOSFET - JCET
CJD04N60A N-Channel Power MOSFET - ZPSEMI
CJD04N60B N-Channel MOSFET - JCET
CJD04N60B N-Channel Power MOSFET - ZPSEMI
CJD04N65 N-Channel MOSFET - JCET
CJD04N65 N-Channel Power MOSFET - ZPSEMI
CJD04N65A N-Channel Power MOSFET - ZPSEMI

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)