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HFW7N80

Part Number	HFW7N80
Manufacturer	SemiHow
Description	800V N-Channel MOSFET
Published	Dec 22, 2016
Detailed Description	HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.0 A FEATU...
Datasheet	HFW7N80 PDF File

Overview

HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.
0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW7N80 HFI7N80 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) ...

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HFW7N80 800V N-Channel MOSFET - SemiHow

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