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3CG708

Part Number	3CG708
Manufacturer	Qunli Electric
Description	PNP Silicon High Frequency Middle Power Transistor
Published	Dec 24, 2016
Detailed Description	3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High w...
Datasheet	3CG708 PDF File

Overview

3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1.
Using epitaxy planar technology structure.
High working frequency.
Metallic packaging.
2.
Small volume, light weight, easy installation.
3.
Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit.
Make up push pull amplifying circuit with NPN.
4.
Quality Class: GS, G.
Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max.
Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C C-E Breakdown Voltage V(BR)CEO V E-B Breakdown Voltage V(BR)EBO V Collector- Emitter VCE(sat) V S...

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