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3DA5200A

Part Number	3DA5200A
Manufacturer	ZHONGGUI ELECTRONICS
Description	NPN Transistor
Published	Dec 24, 2016
Detailed Description	DONGGUAN ZHONGGUI ELECTRONICS CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200A TRANSISTOR (NPN) FEATURES z High ...
Datasheet	3DA5200A PDF File

Overview

DONGGUAN ZHONGGUI ELECTRONICS CO.
, LTD TO-3P Plastic-Encapsulate Transistors 3DA5200A TRANSISTOR (NPN) FEATURES z High Breakdown Voltage z High Current and Power Capacity TO – 3P 1.
BASE 2.
COLLECTOR 3.
EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 200 5 15 3 42 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) V...

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