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STPSC10H12

STMicroelectronics
Part Number STPSC10H12
Manufacturer STMicroelectronics
Description power Schottky silicon carbide diode
Published Jan 7, 2017
Detailed Description STPSC10H12 Datasheet 1200 V power Schottky silicon carbide diode A K A K TO-220AC K K K A K DPAK HV 2L K DO-247 LL A...
Datasheet PDF File STPSC10H12 PDF File

STPSC10H12
STPSC10H12

Overview
STPSC10H12 Datasheet 1200 V power Schottky silicon carbide diode A K A K TO-220AC K K K A K DPAK HV 2L K DO-247 LL A K A NC D²PAK Features • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK®2 compliant Description The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing pat...


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