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3DD13003N3D

JCET
Part Number 3DD13003N3D
Manufacturer JCET
Description NPN Transistor
Published Jan 8, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3D TRANSISTOR (NPN) ...
Datasheet PDF File 3DD13003N3D PDF File

3DD13003N3D
3DD13003N3D

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3D TRANSISTOR (NPN) TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1.
BASE 2.
COLLECTOR 3.
EMITTER Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 1.
5 1.
25 150 -55~150 Unit V V V A W ℃ ℃ CIRCUIT: ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base bre...


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