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3DD13003N9

Part Number	3DD13003N9
Manufacturer	JCET
Description	NPN Transistor
Published	Jan 8, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N9 TRANSISTOR (NPN) ...
Datasheet	3DD13003N9 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N9 TRANSISTOR (NPN) TO-126 FEATURES Power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 700 400 11 1.
5 1.
25 100 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emit...

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