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FDS86141

Fairchild Semiconductor
Part Number FDS86141
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDS86141 N-Channel Power Trench® MOSFET May 2015 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Features ...
Datasheet PDF File FDS86141 PDF File

FDS86141
FDS86141

Overview
FDS86141 N-Channel Power Trench® MOSFET May 2015 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.
5 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Applications „ DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Ch...


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