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FDMC510P

Fairchild Semiconductor
Part Number FDMC510P
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.0 mΩ Features „ Max rDS(o...
Datasheet PDF File FDMC510P PDF File

FDMC510P
FDMC510P

Overview
FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.
0 mΩ Features „ Max rDS(on) = 8.
0 mΩ at VGS = -4.
5 V, ID = -12 A „ Max rDS(on) = 9.
8 mΩ at VGS = -2.
5 V, ID = -10 A „ Max rDS(on) = 13 mΩ at VGS = -1.
8 V, ID = -9.
3 A „ Max rDS(on) = 17 mΩ at VGS = -1.
5 V, ID = -8.
3 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level >2 KV typical (Note 4) June 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications „ Battery Management „ Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter ...


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