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FDMC86160ET100

Fairchild Semiconductor
Part Number FDMC86160ET100
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 1...
Datasheet PDF File FDMC86160ET100 PDF File

FDMC86160ET100
FDMC86160ET100

Overview
FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance.
This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
Applications „ Bridge Topologies „ Synchronous Rectifier Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted ...


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