MOSFET
Description
FQA9N90C_F109 — N-Channel QFET® MOSFET
FQA9N90C_F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A
Low Gate Charge (Typ. 45 nC)
Low Crss . 14 pF)
100% Avalanche Tested
RoHS compliant
April 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semic...
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