SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G D S
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