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P0660ATF

UNIKC
Part Number P0660ATF
Manufacturer UNIKC
Description N-Channel MOSFET
Published Jan 29, 2017
Detailed Description P0660ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-220F ...
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P0660ATF
P0660ATF

Overview
P0660ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.
25Ω @VGS = 10V ID 6A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 6 4.
3 20 5 134 Power DissipationA TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 39 15.
6 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 60V , Starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.
97 62.
5 UNITS °C / W Ver 1.
0 1 2012/4/16 P0660ATF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) ...


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