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P8010BIS

Part Number	P8010BIS
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 2, 2017
Detailed Description	P8010BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-251(IS...
Datasheet	P8010BIS PDF File

Overview

P8010BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-251(IS) 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 15 9 35 Avalanche Current IAS 12 Avalanche Energy L = 0.
1mH EAS 7.
2 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum ju...

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